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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| TD200F10KSC-A | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element | - | |||||
| TD251N14KOF | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 261000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5 | - | |||||
| AD | BT150-500R,127 | WeEn | 晶体闸流管/双向可控硅,WeEn - BT150-500R - Silicon Controlled Rectifier - TO-220AB | |||||
| TD200F12KSL-K | Infineon Technologies AG | Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM) | - | |||||
| TD200F12KSL | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD200F13KEM | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD200F13KEM-K | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element | - | |||||
| TD200F12KEB | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD260N18KOF | Infineon Technologies AG | Silicon Controlled Rectifier | - | |||||
| TD260N22KOF | Infineon Technologies AG | Silicon Controlled Rectifier, 450A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD240N32KOFHPSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 700A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element, MODULE-5 | ￥2667.2210 | |||||
| TD200F08KFL | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD200F12KSL-A | Infineon Technologies AG | Silicon Controlled Rectifier, 200000mA I(T), 1200V V(RRM) | - | |||||
| TD200F11KSL-K | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element | - | |||||
| TD200F10KSC | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD200F10KEM-A | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element | - | |||||
| TD200F13KSC-A | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element | - | |||||
| TD200F13KSB | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD210N14KOFHOSA1 | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5 | - | |||||
| TD200F11KEL-A | Infineon Technologies AG | Silicon Controlled Rectifier, 200000mA I(T), 1100V V(RRM) | - | |||||
| TD200F11KEM | Infineon Technologies AG | Silicon Controlled Rectifier, 410A I(T)RMS, 200000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element, MODULE-5 | - | |||||
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